72512 tkim/62405ea msim tb-00001405/52501 ts kt ta-3260 no.6307-1/8 http://onsemi.com semiconductor components industries, llc, 2013 september, 2013 2SA2013/2sc5566 bipolar transistor (-)50v, (-)4a, low vce(sat), (pnp)npn single pcp applicaitons ? relay drivers, lamp drivers, motor drivers, ash features ? adoption of fbet and mbit processes ? large current capacity ? low collector-to-emitter saturation voltage ? high-speed switching ? ultrasmall package facilitales miniaturization in end products ? high allowable power dissipation ( )2SA2013 speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (-50)100 v collector-to-emitter voltage v ces (-50)100 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)6 v continued on next page. package dimensions unit : mm (typ) 7007b-004 ordering number : en6307c product & package information ? package : pcp ? jeita, jedec : sc-62, sot-89, to-243 ? minimum packing quantity : 1,000 pcs./reel packing type: td marking electrical connection td 1 : base 2 : collecto r 3 : emitter pcp 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 123 1.5 0.75 top view bottom view 2SA2013-td-e 2sc5566-td-e at lot no. fc lot no. 2sc5566 2SA2013 2 3 1 2sc5566 2 3 1 2SA2013
2SA2013 / 2sc5566 no.6307-2/8 continued from preceding page. parameter symbol conditions ratings unit collector current i c (--)4 a collector current (pulse) i cp (--)7 a base current i b (--)600 ma collector dissipation p c when mounted on ceramic substrate (250mm 2 0.8mm) 1.3 w tc=25c 3.5 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)40v, i e =0a (--)1 a emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)1 a dc current gain h fe v ce =(--)2v, i c =(--)500ma 200 560 gain-bandwidth product f t v ce =(--)10v, i c =(--)500ma (360)400 mhz output capacitance cob v cb =(--)10v, f=1mhz (24)15 pf collector-to-emitter saturation voltage v ce (sat)1 i c =(--)1a, i b =(--)50ma (--105)85 (--180)130 mv v ce (sat)2 i c =(--)2a, i b =(--)100ma (--200)150 (--340)225 mv base-to-emitter saturation voltage v be (sat) i c =(--)2a, i b =(--)100ma (--)0.89 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--50)100 v collector-to-emitter breakdown voltage v (br)ces i c =(--)100 a, r be =0 (--50)100 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)6 v turn-on time t on see speci ed test circuit. (30)35 ns storage time t stg (230)300 ns fall time t f (15)20 ns switching time test circuit ordering information device package shipping memo 2SA2013-td-e pcp 1,000pcs./reel pb free 2sc5566-td-e pcp 1,000pcs./reel v r 10 r b v cc =25v v be = --5v + + 50 input outpu t r l 25 100 f 470 f pw=20 s i b1 d.c. 1% i b2 i c =10i b1 = --10i b2 =1a for pnp, the polarit y is reversed. stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
2SA2013 / 2sc5566 no.6307-3/8 i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a 4 3 2 1 0.4 0.8 1.2 1.6 2.0 0 0 i b =0ma 10ma 20ma 30ma 40ma 50ma 100ma 60ma 70ma 80ma 90ma it00153 -- 4 -- 3 -- 2 -- 1 0 0 --0.4 --0.8 --1.2 --1.6 --2.0 --10ma --20ma --60ma --50ma --80ma --90ma --100ma i b =0ma it00152 --30ma --40ma --70ma 2SA2013 2sc5566 h fe -- i c h fe -- i c dc current gain, h fe collector current, i c -- a collector current, i c -- a dc current gain, h fe i c -- v be i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a v ce (sat) -- i c v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 2sc5566 v ce =2v ta=75 c 25 c --25 c it00155 ta=75 c 25 c --25 c 2SA2013 v ce = --2v --4.0 --3.5 --3.0 --2.5 --2.0 --1.0 --0.5 --1.5 0 0 --0.2 --0.4 --0.6 --0.8 --1.4 --1.0 --1.2 it00154 1000 100 2 3 5 7 2 3 5 7 10 2 3 5 7 1.0 0.01 0.1 23 57 23 57 23 57 1.0 10 ta=75 c -- 2 5 c it00160 2sc5566 i c / i b =20 --1000 --100 2 3 5 7 2 3 5 7 --10 2 3 5 7 --1.0 --0.01 --0.1 23 57 23 57 23 57 --1.0 --10 ta=75 c --25 c it00158 2SA2013 i c / i b =20 ta=75 c 25 c --25 c 1000 100 7 5 3 2 7 5 3 2 10 --0.01 3 25 --10 --0.1 73 257 3 257 --1.0 2SA2013 v ce = --2v it00156 1000 100 7 5 3 2 7 5 3 2 10 0.01 3 25 10 0.1 73 257 3 257 1.0 ta=75 c --25 c 25 c 2sc5566 v ce =2v it00157 25 c 25 c
2SA2013 / 2sc5566 no.6307-4/8 v ce (sat) -- i c v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a 0.01 0.1 23 57 23 57 23 57 1.0 10 10000 1000 7 5 3 2 7 5 3 2 7 5 3 2 100 10 it00161 ta=75 c -- 2 5 c 2sc5566 i c / i b =50 --0.01 --0.1 23 57 23 57 23 57 --1.0 --10 --10000 7 5 3 2 7 5 3 2 --1000 7 5 3 2 --100 --10 it00159 ta=75 c ta=75 c 25 c 25 c --25 c --25 c 2SA2013 i c / i b =50 25 c 25 c ta=75 c -- 2 5 c v be (sat) -- i c v be (sat) -- i c collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v cob -- v cb f t -- i c f t -- i c cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector-to-base voltage, v cb -- v output capacitance, cob -- pf gain-bandwidth product, f t -- mhz collector current, i c -- a collector current, i c -- a gain-bandwidth product, f t -- mhz 10 1.0 0.1 0.01 0.1 1.0 10 ta= --25 c 75 c 7 5 3 2 7 5 3 2 23 57 23 57 23 57 2sc5566 i c / i b =50 it00163 --10 --1.0 --0.1 --0.01 --0.1 --1.0 --10 ta= --25 c 25 c 75 c 7 5 3 2 7 5 3 2 23 57 23 57 23 57 2SA2013 i c / i b =50 it00162 25 c 7 3 100 10 2 5 1000 7 5 3 2 --0.01 257 7 7 3 --0.1 25 325 3 --1.0 --10 57 it00166 2SA2013 v ce = --10v 7 3 100 10 2 5 1000 7 5 3 2 0.01 257 7 7 3 0.1 25 325 3 1.0 10 5 it00167 2sc5566 v ce =10v 5 3 2 7 5 3 2 7 5 3 2 100 10 0.1 23 3 7737 75 5 1.0 2 10 2 5 100 5 it00165 2sc5566 f=1mhz 5 3 2 7 5 3 2 2 7 5 3 100 10 --0.1 23 7 5 7 5237 5237 5 --1.0 --10 --100 it00164 2SA2013 f=1mhz
2SA2013 / 2sc5566 no.6307-5/8 10 1.0 0.01 2 7 5 3 2 7 5 3 2 0.1 7 5 3 2 1.0 0.1 10 100 25 37 25 37 25 37 i cp =7a 100ms 10ms 1ms 100 s 500 s i c =4a dc oper a tion it00168 0 2.0 1.5 1.3 1.0 0.5 20 060 40 80 100 140 120 160 it00169 2SA2013 / 2sc5566 a s o p c -- ta collector dissipation, p c -- w ambient temperature, ta -- c collector-to-emitter voltage, v ce -- v collector current, i c -- a 2SA2013 / 2sc5566 tc=25 c single pulse for pnp, the minus sign is omitted. mounted on a ceramic board (250mm 2 ? 0.8mm) p c -- tc case temperature, tc -- c collector dissipation, p c -- w p c -- tc 4.0 0 3.5 3.0 2.0 1.5 1.0 0.5 2.5 20 060 40 80 100 140 120 160 it01533 2SA2013 / 2sc5566
2SA2013 / 2sc5566 no.6307-6/8 bag packing speci cation 2SA2013-td-e, 2sc5566-td-e
2SA2013 / 2sc5566 no.6307-7/8 outline drawing land pattern example 2SA2013-td-e, 2sc5566-td-e mass (g) unit 0.058 * for reference mm unit: mm 2.2 1.0 1.8 1.5 0.9 3.7 1.5 3.0 1.0 45 45
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